1. Auger recombination occurs orders of magnitude faster than the radiative recombination . 2. Introducing an IB greatly increases non-radiative recombination mechanisms. 3. The exact reverse of radiative recombination is light absorption. 4. Non-radiative recombination occurs primarily at such sites. 5. This process is called radiative recombination . 6. The latter originate, e . g ., from the radiative recombination of excitons, quantum optical correlations. 7. If the centre with the hole is a luminescence center ( radiative recombination centre ) emission of light will occur. 8. Also, self-consistent computer simulations have shown that radiative recombination is focused where regions are rich of indium. 9. Charge carrier trapping on QDs increases the probability of non-radiative recombination , which reduces the fluorescence quantum yield. 10. Since silicon is an indirect band gap semiconductor, the quantum yield of radiative recombination in this material is very low.
Mobile